Abhinav Kranti received the Ph.D. degree in Electronics from the University of Delhi, Delhi, India, in 2002. From July 2002 to November 2004, he was a Postdoctoral Researcher at Microwave Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium, where he worked on graded channel architecture and multi-gate SOI MOSFETs for analog/RF applications. He was a Research Fellow at Semiconductors and Nanotechnology Group, Queen’s University Belfast, Belfast, U.K., from February 2005 to December 2009, where he worked novel device and circuit design methodologies for low-voltage analog/RF and digital applications. From January 2010 till November 2010, he was as a Researcher at Tyndall National Institute, University College Cork, Cork, Ireland where he worked on device and circuit design with Junctionless Nanowire Transistors. He worked as Assistant Professor (from November 2010 to September 2013) and Associate Professor (from September 2013 to December 2017) in the Discipline of Electrical Engineering of Indian Institute of Technology Indore, India. From December 2017, he has been working as an Professor at IIT Indore. He has worked with several leading semiconductor companies on industry sponsored work.
Dr. Kranti was awarded Senior Research
Fellowship by the Council of Scientific and Industrial Research, Government of
India, New Delhi,
in May 2001. His paper submitted to the IEEE topical meeting on silicon
monolithic integrated circuits in RF systems in 2001 was selected as one of the
outstanding student papers. One of his papers was selected in the 2006
Semiconductor Science and Technology, Institute of Physics (IOP), annual
highlights collection. In 2011, the same paper was included in a collection of 25 research articles commemorating 25 years of Semiconductor Science and Technology. In 2007, his work was recognized as highly valued
contribution by Queen’s University Belfast, UK. One of his research paper on junctionless transistor was selected as one of the most cited articles published since 2009 in Solid-State Electronics in February 2014. One of his research paper was featured in the Lab Talk at nanotechweb.org entitled, “Transistor ‘imperfection’ leads towards perfection” in October 2016. He was selected for the award of excellence in teaching at IIT Indore in 2015 and 2017. He received a scholarship from German Academic Exchange Service (DAAD) to visit RWTH Aachen in June 2017 under the Bilateral Exchange of Academics program.
Dr. Kranti's research interests include semiconductor device physics, device and circuit design for logic, analog and RF applications, novel FET architectures for advanced CMOS applications, MOS structures for biosensing applications, thermal resistance management in bipolar and MOS devices and GaN-based wide bandgap devices for microwave applications. In these fields, he has coauthored more than 100 scientific articles in reviewed international journals/conferences. His work has been well cited in patents, journals and conference proceedings. He has been a technical reviewer for several IEEE, Elsevier, IOP, IET, Springer and Wiley journals.